FLOSFIA
Date | Investors | Amount | Round |
---|---|---|---|
- | N/A | - | |
N/A | JPY2.0m | Early VC | |
N/A | Spinout | ||
N/A | N/A | Seed | |
N/A | JPY220m | Series A | |
N/A | JPY310m | Early VC | |
N/A | N/A | Late VC | |
N/A | JPY100m | Early VC | |
N/A | JPY500m | Early VC | |
N/A | JPY2.0m | Early VC | |
N/A | JPY3.0m | Early VC | |
N/A | JPY500m | Late VC | |
N/A | JPY1.0b | Series E | |
N/A | Late VC | ||
Total Funding | $20.3m |
Related Content
Recent News about FLOSFIA
EditFLOSFIA specializes in developing advanced low-loss power devices using the unique physical properties of gallium oxide (Ga2O3). The company has successfully created a Schottky Barrier Diode (SBD) with the lowest specific on-resistance available in the market, achieving up to 90% reduction in power loss. FLOSFIA is currently focused on establishing its own production lines to commence commercial production. The primary clients include industries requiring high-efficiency power solutions, such as renewable energy, electric vehicles, and industrial machinery. Operating in the semiconductor market, FLOSFIA's business model revolves around the development, manufacturing, and sale of these cutting-edge power devices. Revenue is generated through direct sales and potential licensing agreements.
Keywords: gallium oxide, low-loss power devices, Schottky Barrier Diode, energy efficiency, semiconductor, renewable energy, electric vehicles, industrial machinery, power loss reduction, commercial production.